Artículo

Román, A.; Rengifo, M.; Saleh Medina, L.M.; Reinoso, M.; Negri, R.M.; Steren, L.B.; Rubi, D. "BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior" (2017) Thin Solid Films. 628:208-213
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Abstract:

We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure. © 2017 Elsevier B.V.

Registro:

Documento: Artículo
Título:BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
Autor:Román, A.; Rengifo, M.; Saleh Medina, L.M.; Reinoso, M.; Negri, R.M.; Steren, L.B.; Rubi, D.
Filiación:Gereencia de Investigación y Aplicaciones, CNEA, Av. Gral Paz 1499 (1650), San Martín, Buenos Aires, Argentina
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina
Instituto de Química Física de Materiales, Ambiente y Energía (INQUIMAE) and Departamento de Química Inorgánica, Analítica y Química Física, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Buenos Aires, Argentina
Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete (1650), San Martín, Buenos Aires, Argentina
Palabras clave:BaTiO3; Memristive oxides; Thin films on silicon; Barium compounds; Ferroelectric films; Ferroelectricity; Memristors; Microstructure; Pulsed laser deposition; Pulsed lasers; Silicon; Stoichiometry; Batio; Fabrication and characterizations; Ferroelectric order; Laser-pulse energy; Oxidation/reduction; Platinized silicon; Resistive switching; Tetragonal distortion; Thin films
Año:2017
Volumen:628
Página de inicio:208
Página de fin:213
DOI: http://dx.doi.org/10.1016/j.tsf.2017.03.038
Título revista:Thin Solid Films
Título revista abreviado:Thin Solid Films
ISSN:00406090
CODEN:THSFA
Registro:http://digital.bl.fcen.uba.ar/collection/paper/document/paper_00406090_v628_n_p208_Roman

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Citas:

---------- APA ----------
Román, A., Rengifo, M., Saleh Medina, L.M., Reinoso, M., Negri, R.M., Steren, L.B. & Rubi, D. (2017) . BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior. Thin Solid Films, 628, 208-213.
http://dx.doi.org/10.1016/j.tsf.2017.03.038
---------- CHICAGO ----------
Román, A., Rengifo, M., Saleh Medina, L.M., Reinoso, M., Negri, R.M., Steren, L.B., et al. "BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior" . Thin Solid Films 628 (2017) : 208-213.
http://dx.doi.org/10.1016/j.tsf.2017.03.038
---------- MLA ----------
Román, A., Rengifo, M., Saleh Medina, L.M., Reinoso, M., Negri, R.M., Steren, L.B., et al. "BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior" . Thin Solid Films, vol. 628, 2017, pp. 208-213.
http://dx.doi.org/10.1016/j.tsf.2017.03.038
---------- VANCOUVER ----------
Román, A., Rengifo, M., Saleh Medina, L.M., Reinoso, M., Negri, R.M., Steren, L.B., et al. BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior. Thin Solid Films. 2017;628:208-213.
http://dx.doi.org/10.1016/j.tsf.2017.03.038