Artículo

Izraelevitch, F.; Amidei, D.; Aprahamian, A.; Arcos-Olalla, R.; Cancelo, G.; Casarella, C.; Chavarria, A.E.; Collon, P.; Estrada, J.; Moroni, G.F.; Guardincerri, Y.; Gutiérrez, G.; Gyurjinyan, A.; Kavner, A.; Kilminster, B.; Liao, J.; Liu, Q.; López, M. (...) Villanueva, L. "A measurement of the ionization efficiency of nuclear recoils in silicon" (2017) Journal of Instrumentation. 12(6)
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Abstract:

We have measured the ionization efficiency of silicon nuclear recoils with kinetic energy between 1.8 and 20 keV. We bombarded a silicon-drift diode with a neutron beam to perform an elastic-scattering experiment. A broad-energy neutron spectrum was used and the nuclear recoil energy was reconstructed using a measurement of the time of flight and scattering angle of the scattered neutron. The overall trend of the results of this work is well described by the theory of Lindhard et al. above 4 keV of recoil energy. Below this energy, the presented data shows a deviation from the model. The data indicates a faster drop than the theory prediction at low energies. © 2017 IOP Publishing Ltd and Sissa Medialab.

Registro:

Documento: Artículo
Título:A measurement of the ionization efficiency of nuclear recoils in silicon
Autor:Izraelevitch, F.; Amidei, D.; Aprahamian, A.; Arcos-Olalla, R.; Cancelo, G.; Casarella, C.; Chavarria, A.E.; Collon, P.; Estrada, J.; Moroni, G.F.; Guardincerri, Y.; Gutiérrez, G.; Gyurjinyan, A.; Kavner, A.; Kilminster, B.; Liao, J.; Liu, Q.; López, M.; Molina, J.; Privitera, P.; Reyes, M.A.; Scarpine, V.; Siegl, K.; Smith, M.; Strauss, S.; Tan, W.; Tiffenberg, J.; Villanueva, L.
Filiación:Facultad de Ingeniería, Universidad Nacional de Asunción, Asunción, Paraguay
Departamento de Física, FCEN-Universidad de Buenos Aires, Buenos Aires, Argentina
Kavli Institute for Cosmological Physics, Enrico Fermi Institute, University of Chicago, Chicago, IL, United States
Fermi National Accelerator Laboratory, Batavia, IL, United States
Departamento de Física, Universidad de Guanajuato, Guanajuato, Mexico
Department of Physics, University of Michigan, Ann Arbor, MI, United States
Department of Physics, University of Notre Dame, Notre Dame, IN, United States
Physik-Institut, Universität Zürich, Zürich, Switzerland
Palabras clave:Dark Matter detectors (WIMPs, axions, etc.); Instrumentation and methods for time-of-flight (TOF) spectroscopy; Neutron detectors (cold, thermal, fast neutrons); Solid state detectors; Ionization; Kinetic energy; Kinetics; Semiconductor detectors; Silicon; Dark matter detectors; Fast neutrons; Ionization efficiency; Scattering angles; Silicon drift-diodes; Solid state detectors; Theory predictions; Time of flight; Neutrons
Año:2017
Volumen:12
Número:6
DOI: http://dx.doi.org/10.1088/1748-0221/12/06/P06014
Título revista:Journal of Instrumentation
Título revista abreviado:J. Instrum.
ISSN:17480221
Registro:http://digital.bl.fcen.uba.ar/collection/paper/document/paper_17480221_v12_n6_p_Izraelevitch

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Citas:

---------- APA ----------
Izraelevitch, F., Amidei, D., Aprahamian, A., Arcos-Olalla, R., Cancelo, G., Casarella, C., Chavarria, A.E.,..., Villanueva, L. (2017) . A measurement of the ionization efficiency of nuclear recoils in silicon. Journal of Instrumentation, 12(6).
http://dx.doi.org/10.1088/1748-0221/12/06/P06014
---------- CHICAGO ----------
Izraelevitch, F., Amidei, D., Aprahamian, A., Arcos-Olalla, R., Cancelo, G., Casarella, C., et al. "A measurement of the ionization efficiency of nuclear recoils in silicon" . Journal of Instrumentation 12, no. 6 (2017).
http://dx.doi.org/10.1088/1748-0221/12/06/P06014
---------- MLA ----------
Izraelevitch, F., Amidei, D., Aprahamian, A., Arcos-Olalla, R., Cancelo, G., Casarella, C., et al. "A measurement of the ionization efficiency of nuclear recoils in silicon" . Journal of Instrumentation, vol. 12, no. 6, 2017.
http://dx.doi.org/10.1088/1748-0221/12/06/P06014
---------- VANCOUVER ----------
Izraelevitch, F., Amidei, D., Aprahamian, A., Arcos-Olalla, R., Cancelo, G., Casarella, C., et al. A measurement of the ionization efficiency of nuclear recoils in silicon. J. Instrum. 2017;12(6).
http://dx.doi.org/10.1088/1748-0221/12/06/P06014