Artículo
Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. "Strong electron correlation effects in nonvolatile electronic memory devices" (2006) Applied Physics Letters. 88(3):1-3
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Abstract:
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device. © 2006 American Institute of Physics.
Registro:
| Documento: | Artículo |
| Título: | Strong electron correlation effects in nonvolatile electronic memory devices |
| Autor: | Rozenberg, M.J.; Inoue, I.H.; Sánchez, M.J. |
| Filiación: | Laboratoire de Physique des Solides, UMR8502, Université Paris-Sud, Orsay 91405, France Departamento de Física Juan José Giambiagi, FCEN, Ciudad Universitaria Pabellón I, (1428) Buenos Aires, Argentina Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan Centro Atómico Bariloche, (8400) San Carlos de Bariloche, Argentina |
| Palabras clave: | Dielectric materials; Heterojunctions; Hysteresis; Nonvolatile storage; Transition metal alloys; Electron correlation effects; Nonvolatile electronic memory devices; Resistance switching; Transition metal oxides; Data storage equipment |
| Año: | 2006 |
| Volumen: | 88 |
| Número: | 3 |
| Página de inicio: | 1 |
| Página de fin: | 3 |
| DOI: | http://dx.doi.org/10.1063/1.2164917 |
| Título revista: | Applied Physics Letters |
| Título revista abreviado: | Appl Phys Lett |
| ISSN: | 00036951 |
| CODEN: | APPLA |
| Registro: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v88_n3_p1_Rozenberg |
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Citas:
---------- APA ----------
Rozenberg, M.J., Inoue, I.H. & Sánchez, M.J. (2006) . Strong electron correlation effects in nonvolatile electronic memory devices. Applied Physics Letters, 88(3), 1-3.http://dx.doi.org/10.1063/1.2164917
---------- CHICAGO ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "Strong electron correlation effects in nonvolatile electronic memory devices" . Applied Physics Letters 88, no. 3 (2006) : 1-3.http://dx.doi.org/10.1063/1.2164917
---------- MLA ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. "Strong electron correlation effects in nonvolatile electronic memory devices" . Applied Physics Letters, vol. 88, no. 3, 2006, pp. 1-3.http://dx.doi.org/10.1063/1.2164917
---------- VANCOUVER ----------
Rozenberg, M.J., Inoue, I.H., Sánchez, M.J. Strong electron correlation effects in nonvolatile electronic memory devices. Appl Phys Lett. 2006;88(3):1-3.http://dx.doi.org/10.1063/1.2164917
